CVD/PECVD Tube Furnace

CVD/PECVD Tube Furnace

This advanced CVD/PECVD tube furnace utilizes plasma-enhanced chemical vapor deposition (PECVD) technology to deposit high-quality thin films on various substrates including metals, semiconductors, and insulators. Ideal for microelectronics, optoelectronics, flat-panel displays, and energy storage applications, it combines precision deposition capabilities with industrial-grade reliability.

Key Features

• Deposition Performance:
  • RF glow discharge technology achieves deposition rates up to 10Å/s
  • Advanced multi-point RF feeding ensures 8% thickness uniformity (3σ)
  • Semiconductor-grade batch consistency (<2% substrate-to-substrate variation)
• Thermal Design:
  • Maximum temperature: 1200°C (FeCrAl heating wires)
  • 50-segment programmable PID control (±1°C accuracy)
  • Double-walled air-cooled housing (surface temperature <50°C)
• Process Control:
  • Specialized gas distribution system for uniform precursor delivery
  • Plasma stability monitoring with automatic impedance matching
  • Compatible with reactive gases (SiH₄, NH₃, etc.) and inert environments
• Safety & Durability:
  • 304 stainless steel dual-seal flange system
  • Adjustable flange supports for extended quartz tube lifespan
  • Over-temperature protection and electrical leakage detection
  • Emergency stop functionality
• Vacuum Performance:
  • Base vacuum: -0.1 MPa (7×10⁻⁴ Pa with molecular pump option)
  • Dry vacuum system prevents process contamination

Standard Configuration

• High-purity quartz furnace tube (1 pc)
• RF plasma generator (13.56 MHz)
• Vacuum-sealing flange assembly (1 set)
• Vacuum pressure gauge (1 pc)
• Rotary vane vacuum pump (1 set)
• End plugs (2 pcs)

Optional Upgrades

• Advanced gas control system:
  • Multi-channel mass flow controllers (MFC)
  • Gas mixing panel with real-time monitoring
• Enhanced vacuum package:
  • Turbo molecular pump station
  • Cryogenic trap system
• 7-inch HD touchscreen interface
• Load-lock chamber for rapid substrate exchange
• In-situ optical monitoring system

Typical Applications

• Silicon nitride/oxide deposition
• Amorphous silicon thin films
• Diamond-like carbon (DLC) coatings
• Photovoltaic cell fabrication
• MEMS device encapsulation
• Flexible electronics manufacturing

Technical Advantages

• Plasma-enhanced deposition for low-temperature processing
• Precise thickness control (±2% batch consistency)
• Modular design for easy process upgrades
• CE-certified safety compliance
• Industrial-grade construction for 24/7 operation

This CVD/PECVD system offers researchers and manufacturers a versatile platform for high-precision thin-film deposition. Its combination of rapid deposition rates, excellent uniformity, and process stability makes it ideal for both R&D and pilot production environments.