Horno tubular CVD/PECVD

Horno tubular CVD/PECVD

This advanced CVD/PECVD tube furnace utilizes plasma-enhanced chemical vapor deposition (PECVD) technology to deposit high-quality thin films on various substrates including metals, semiconductors, and insulators. Ideal for microelectronics, optoelectronics, flat-panel displays, and energy storage applications, it combines precision deposition capabilities with industrial-grade reliability.

Características principales

• Deposition Performance:
  • RF glow discharge technology achieves deposition rates up to 10Å/s
  • Advanced multi-point RF feeding ensures 8% thickness uniformity (3σ)
  • Semiconductor-grade batch consistency (<2% substrate-to-substrate variation)
• Thermal Design:
  • Maximum temperature: 1200°C (FeCrAl heating wires)
  • 50-segment programmable PID control (±1°C accuracy)
  • Carcasa de doble pared refrigerada por aire (temperatura superficial <50°C)
• Process Control:
  • Specialized gas distribution system for uniform precursor delivery
  • Plasma stability monitoring with automatic impedance matching
  • Compatible with reactive gases (SiH₄, NH₃, etc.) and inert environments
• Seguridad y durabilidad:
  • Sistema de brida de doble cierre de acero inoxidable 304
  • Adjustable flange supports for extended quartz tube lifespan
  • Over-temperature protection and electrical leakage detection
  • Emergency stop functionality
• Rendimiento del vacío:
  • Vacío base: -0,1 MPa (7×10-⁴ Pa con opción de bomba molecular).
  • Dry vacuum system prevents process contamination

Configuración estándar

• Tubo de horno de cuarzo de gran pureza (1 ud.)
• RF plasma generator (13.56 MHz)
• Conjunto de brida de sellado al vacío (1 juego)
• Manómetro de vacío (1 ud.)
• Bomba de vacío rotativa de paletas (1 juego)
• Tapones terminales (2 uds.)

Mejoras opcionales

• Advanced gas control system:
  • Multi-channel mass flow controllers (MFC)
  • Gas mixing panel with real-time monitoring
• Enhanced vacuum package:
  • Turbo molecular pump station
  • Cryogenic trap system
• Interfaz de pantalla táctil HD de 7 pulgadas
• Load-lock chamber for rapid substrate exchange
• In-situ optical monitoring system

Aplicaciones típicas

• Silicon nitride/oxide deposition
• Amorphous silicon thin films
• Diamond-like carbon (DLC) coatings
• Photovoltaic cell fabrication
• MEMS device encapsulation
• Flexible electronics manufacturing

Technical Advantages

• Plasma-enhanced deposition for low-temperature processing
• Precise thickness control (±2% batch consistency)
• Modular design for easy process upgrades
• Cumplimiento de la normativa de seguridad con certificación CE
• Industrial-grade construction for 24/7 operation

This CVD/PECVD system offers researchers and manufacturers a versatile platform for high-precision thin-film deposition. Its combination of rapid deposition rates, excellent uniformity, and process stability makes it ideal for both R&D and pilot production environments.