Forno tubolare CVD/PECVD

Forno tubolare CVD/PECVD

This advanced CVD/PECVD tube furnace utilizes plasma-enhanced chemical vapor deposition (PECVD) technology to deposit high-quality thin films on various substrates including metals, semiconductors, and insulators. Ideal for microelectronics, optoelectronics, flat-panel displays, and energy storage applications, it combines precision deposition capabilities with industrial-grade reliability.

Caratteristiche principali

• Deposition Performance:
  • RF glow discharge technology achieves deposition rates up to 10Å/s
  • Advanced multi-point RF feeding ensures 8% thickness uniformity (3σ)
  • Semiconductor-grade batch consistency (<2% substrate-to-substrate variation)
• Thermal Design:
  • Maximum temperature: 1200°C (FeCrAl heating wires)
  • 50-segment programmable PID control (±1°C accuracy)
  • Alloggiamento a doppia parete raffreddato ad aria (temperatura superficiale <50°C)
• Process Control:
  • Specialized gas distribution system for uniform precursor delivery
  • Plasma stability monitoring with automatic impedance matching
  • Compatible with reactive gases (SiH₄, NH₃, etc.) and inert environments
• Sicurezza e durata:
  • Sistema di flange a doppia tenuta in acciaio inox 304
  • Adjustable flange supports for extended quartz tube lifespan
  • Over-temperature protection and electrical leakage detection
  • Emergency stop functionality
• Prestazioni del vuoto:
  • Vuoto di base: -0,1 MPa (7×10-⁴ Pa con opzione pompa molecolare)
  • Dry vacuum system prevents process contamination

Configurazione standard

• Tubo per forno al quarzo di elevata purezza (1 pz)
• RF plasma generator (13.56 MHz)
• Gruppo flangia di tenuta sottovuoto (1 set)
• Manometro a vuoto (1 pz)
• Pompa per vuoto rotativa a palette (1 set)
• Tappi di chiusura (2 pezzi)

Aggiornamenti opzionali

• Advanced gas control system:
  • Multi-channel mass flow controllers (MFC)
  • Gas mixing panel with real-time monitoring
• Enhanced vacuum package:
  • Turbo molecular pump station
  • Cryogenic trap system
• Interfaccia touchscreen HD da 7 pollici
• Load-lock chamber for rapid substrate exchange
• In-situ optical monitoring system

Applicazioni tipiche

• Silicon nitride/oxide deposition
• Amorphous silicon thin films
• Diamond-like carbon (DLC) coatings
• Photovoltaic cell fabrication
• MEMS device encapsulation
• Flexible electronics manufacturing

Technical Advantages

• Plasma-enhanced deposition for low-temperature processing
• Precise thickness control (±2% batch consistency)
• Modular design for easy process upgrades
• Conformità alla sicurezza certificata CE
• Industrial-grade construction for 24/7 operation

This CVD/PECVD system offers researchers and manufacturers a versatile platform for high-precision thin-film deposition. Its combination of rapid deposition rates, excellent uniformity, and process stability makes it ideal for both R&D and pilot production environments.